Lateral p-n-p Transistors and Complementary SiC Bipolar Technology

High Performance Complementary Circuits Based on p-SnO and n-IGZO Thin-Film Transistors

Oxide semiconductors are regarded as promising materials for large-area and/or flexible electronics. In this work, a ring oscillator based on n-type indium-gallium-zinc-oxide (IGZO) and p-type tin monoxide (SnO) is presented. The IGZO thin-film transistor (TFT) shows a linear mobility of 11.9 cm²/(V∙s) and a threshold voltage of 12.2 V. The SnO TFT exhibits a mobility of 0.51 cm²/(V∙s) and a th...

Dead space effect in space-charge region of collector of AlGaAsÕInGaAs p-n-p heterojunction bipolar transistors

REACTIVITY OF N-SUBSTITUTED p-BENZO AND p-NAPHTHOQUINONEIMINE N-OXIDES TOWARD DIPOLAROPHILES

The dipolar cycloaddition reactivity of N-(1-naphthy1)-1,4- benzoquinoneimine N-oxide and N-phenyl-1,4- naphthoquinoneimine Noxide are investigated, The latter gives the expected adducts with common dipolarophiles such as acrylonitryle, methyl methacrylate, dimethylacetylene dicarboxylate and N-phenylmaleimide. The reactivity of the former nitrone is found to be minimal. It undergoes, how...

Electronic transport and quantum hall effect in bipolar graphene p-n-p junctions.

We have developed a device fabrication process to pattern graphene into nanostructures of arbitrary shape and control their electronic properties using local electrostatic gates. Electronic transport measurements have been used to characterize locally gated bipolar graphene p-n-p junctions. We observe a series of fractional quantum Hall conductance plateaus at high magnetic fields as the local ...

2D-simulation and analysis of lateral SiC N-emitter SiGe P-base Schottky metal-collector (NPM) HBT on SOI

We report a novel BiCMOS compatible lateral SiC N-emitter, SiGe P-base Schottky metal-collector NPM HBT on SOI. The proposed lateral NPM HBT performance has been evaluated in detail using 2-dimensional device simulation by comparing it with the equivalent NPN HBT and homojunction silicon NPM BJT structures. Based on our simulation results, it is observed that while both the lateral NPM and NPN ...